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Электронный каталог: Parkhomenko, Yu. N. - Structure of Si-Ge Quantum Dots Synthesized by Ge Ion Implantation into Si Wafers
Parkhomenko, Yu. N. - Structure of Si-Ge Quantum Dots Synthesized by Ge Ion Implantation into Si Wafers
Книга (аналит. описание)
Автор: Parkhomenko, Yu. N.
Perspective technologies, materials and equipments of solid-state electronic components: Structure of Si-Ge Quantum Dots Synthesized by Ge Ion Implantation into Si Wafers
б.г.
ISBN отсутствует
Автор: Parkhomenko, Yu. N.
Perspective technologies, materials and equipments of solid-state electronic components: Structure of Si-Ge Quantum Dots Synthesized by Ge Ion Implantation into Si Wafers
б.г.
ISBN отсутствует
Книга (аналит. описание)
Parkhomenko, Yu. N.
Structure of Si-Ge Quantum Dots Synthesized by Ge Ion Implantation into Si Wafers / Yu. N. Parkhomenko, N. N. Gerasimenko // Perspective technologies, materials and equipments of solid-state electronic components : proc. of II russian-japanese seminar (6 April, 2004. Moscow) / ed. L. V. Kozhitov . – M. : MISA Publ., 2004 . – P. 115-119 .
Parkhomenko, Yu. N.
Structure of Si-Ge Quantum Dots Synthesized by Ge Ion Implantation into Si Wafers / Yu. N. Parkhomenko, N. N. Gerasimenko // Perspective technologies, materials and equipments of solid-state electronic components : proc. of II russian-japanese seminar (6 April, 2004. Moscow) / ed. L. V. Kozhitov . – M. : MISA Publ., 2004 . – P. 115-119 .