Электронный каталог -Lenka, T. R. - Role of nanoscale AIN and InN for the microwave characteristics of AlGaN/(Al,In)N/GaN-based HEMT- Absopac

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Электронный каталог: Lenka, T. R. - Role of nanoscale AIN and InN for the microwave characteristics of AlGaN/(Al,In)N/GaN-based HEMT

Lenka, T. R. - Role of nanoscale AIN and InN for the microwave characteristics of AlGaN/(Al,In)N/GaN-based HEMT

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Автор: Lenka, T. R.
Физика и техника полупроводников: Role of nanoscale AIN and InN for the microwave characteristics of AlGaN/(Al,In)N/GaN-based HEMT
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Lenka, T. R.
Role of nanoscale AIN and InN for the microwave characteristics of AlGaN/(Al,In)N/GaN-based HEMT / T. R. Lenka, A. K. Panda // Физика и техника полупроводников . – 2011 . – Т. 45, N 9 . – С. 1258-1265 .