Электронный каталог -Pardeshi, H. - Comparative assessment of III-V heterostructure and silicon underlap double gate MOSFETs- Absopac

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Электронный каталог: Pardeshi, H. - Comparative assessment of III-V heterostructure and silicon underlap double gate MOSFETs

Pardeshi, H. - Comparative assessment of III-V heterostructure and silicon underlap double gate MOSFETs

Статья
Автор: Pardeshi, H.
Физика и техника полупроводников: Comparative assessment of III-V heterostructure and silicon underlap double gate MOSFETs
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Статья

Pardeshi, H.
Comparative assessment of III-V heterostructure and silicon underlap double gate MOSFETs / H. Pardeshi, G. Raj, S. K. Pati, N. Mohankumar, C. K. Sarkar // Физика и техника полупроводников . – 2012 . – Т. 46, N 10 . – С. 1322-1326 .