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Электронный каталог: Burylova, I. V. - Mathematical simulation of distribution of minority charge carriers, generated in multy-layer sem...
Burylova, I. V. - Mathematical simulation of distribution of minority charge carriers, generated in multy-layer sem...
Статья
Автор: Burylova, I. V.
Физика и техника полупроводников: Mathematical simulation of distribution of minority charge carriers, generated in multy-layer sem...
б.г.
ISBN отсутствует
Автор: Burylova, I. V.
Физика и техника полупроводников: Mathematical simulation of distribution of minority charge carriers, generated in multy-layer sem...
б.г.
ISBN отсутствует
Статья
Burylova, I. V.
Mathematical simulation of distribution of minority charge carriers, generated in multy-layer semiconducting structure by a wide electron beam / I. V. Burylova, V. I. Petrov, M. G. Snopova, M. A. Stepovich // Физика и техника полупроводников . – 2007 . – Т. 41, N 4 . – P. 458-461 .
Burylova, I. V.
Mathematical simulation of distribution of minority charge carriers, generated in multy-layer semiconducting structure by a wide electron beam / I. V. Burylova, V. I. Petrov, M. G. Snopova, M. A. Stepovich // Физика и техника полупроводников . – 2007 . – Т. 41, N 4 . – P. 458-461 .